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March 2002
AO4406 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
Features
VDS (V) = 30V ID = 11.5A RDS(ON) < 14m (VGS = 10V) RDS(ON) < 16.5m (VGS = 4.5V) RDS(ON) < 26m (VGS = 2.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current
B
Maximum 30 12 11.5 9.6 80 25 78 3 2.1 -55 to 150
Units V V A A mJ W C
VGS TA=25C TA=70C ID IDM IAV
B,E
Avalanche Current B,E Repetitive Avalanche Energy Power Dissipation L=0.1mH TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
EAV PD TJ, TSTG
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 23 48 12
Max 40 65 16
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4406
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=12A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=10A VGS=2.5V, ID=8A gFS VSD IS Forward Transconductance VDS=5V, ID=10A 25 IS=10A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.8 60 11.5 16 13.5 19.5 38 0.83 1 4.5 1630 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 201 142 0.8 18 VGS=4.5V, VDS=15V, ID=11.5A 2.5 5.5 4 VGS=10V, VDS=15V, RL=1.2, RGEN=3 IF=10A, dI/dt=100A/s 5 32 5 18,7 19.8 14 19.2 16.5 26 1 Min 30 1 5 100 1.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 10V 40 30 ID (A) ID(A) 20 10 VGS=1.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 30 Normalized On-Resistance 25 VGS=2.5V RDS(ON) (m) 20 15 10 5 0 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 ID=10A 30 1.0E-01 RDS(ON) (m) IS (A) 125C 20 25C 10 1.0E-02 1.0E-03 1.0E-04 1.0E-05 2.00 0.0 0.2 0.4 V 0.6 0.8 1.0 SD (Volts) Figure 6: Body-Diode Characteristics 1.2 25C 1.0E+01 VGS=0V 1.0E+00 125C VGS=4.5V 1.8 ID=10A 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=2.5V VGS=10V 4.5V 3V 2.5V 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C VDS=5V
2V
VGS=10V
0 0.00
4.00 6.00 8.00 10.00 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 4 8 12 16 20 24 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=11.5A Capacitance (pF) 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss
100.0 RDS(ON) limited 10.0 ID (Amps) 1ms 100s Power (W) 10ms 0.1s 1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s
50 40 30 20 10 DC 0 0.001 0.01 0.1 1 10 100 1000 TJ(Max)=150C TA=25C
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001
PD Ton
T 10 100 1000
0.0001
0.001
0.01
0.1
1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 ID(A), Peak Avalanche Current 60 50 40 30 20 10 0 0.00001 TA=25C 4
tA =
L ID BV - VDD
Power Dissipation (W)
3
2
10s
1
SteadyState
0.0001 Time in avalanche, t A (s) Figure 12: Avalanche capability
0.001
0 25 50 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note A)
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS IN MILLIMETERS SYMBOLS
DIMENSIONS IN INCHES
A A1 A2 b c D E1 e E h L aaa
MIN 1.45 0.00 --- 0.33 0.19 4.80 3.80 5.80 0.25 0.40 --- 0
NOM 1.50 --- 1.45 --- --- --- --- 1.27 BSC --- --- --- --- ---
MAX 1.55 0.10 --- 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8
MIN 0.057 0.000 --- 0.013 0.007 0.189 0.150 0.228 0.010 0.016 --- 0
NOM 0.059 --- 0.057 --- --- --- --- 0.050 BSC --- --- --- --- ---
MAX 0.061 0.004 --- 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE: LOGO - AOS LOGO 4406 - PART NUMBER CODE. F - FAB LOCATION A - ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE. LN - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
UNIT: mm
PART NO. AO4406
CODE 4406
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape and Reel Data
SO-8 Reel
SO-8 Tape
Leader / Trailer & Orientation

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